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Although QCA (Quantum-dot Cellular Automata) is a promising nanotechnology to replace CMOS (Complementary Metal-Oxide-Semiconductor), it has several known reliability problems. Consequently, the design of robust QCA circuits is a mandatory step towards the consolidation of this new technology. This paper presents a novel methodology for error analysis of QCA circuits based on deterministic and random...
The simulation of aging related degradation mechanisms is a challenging task for timing and reliability estimations during all design phases of digital systems. Some good approaches towards accurate, efficient and applicable timing models at the register transfer level (RTL) have already been made. However recent state-of-the-art models often have to access lower levels of abstraction, such as the...
This paper presents the analysis of power to observe the reliability of a solar-wind hybrid energy system which consist of a Photovoltaic (PV) array, a wind turbine, a Permanent Magnet Synchronous Machine (PMSM), a three phase diode bridge rectifier, a LTC3784 controller, a grid interface inverter, a step-up transformer and a low-pass LC filter. The power from solar-wind hybrid system is combined...
Reliable and protected solar inverter is necessary for effective smart grid implementation. Grid fed hybrid singlestage single-phase solar inverter with incremental conductance MPPT (INC+regulator), closed loop current and voltage controller is implemented here. In normal condition inverter current T.H.D is under the limit as per IEEE-519. In this paper, Anti-islanding protection is achieved by using...
This work details a process-portable test chip, fabricated in 65nm CMOS, specifically designed to measure radiation-induced soft error rate (SER) during operation at near-threshold. A variety of SRAM, register file (RF), and digital logic test structures are included that provide a comprehensive assessment of circuit sensitivities to radiation at low VDD. Neutron irradiation measurements of SRAM/RF...
Estimating the failure probability of nano-scale generic logic cells is a key point for the evaluation of digital system reliability. Noise-induced input variations with process-induced threshold voltage variations affect the probability of correct operation of logic cells. This work quantitatively analyses the probability of invalid output of a cell by introducing novel analytical and semi-analytical...
This paper provides a brief review on characteristics of main topologies of voltage source multilevel inverters. The selected topologies included conventional two levels, flying capacitor, neutral point clamped, three levels and seven levels cascaded H-bridge inverters. Several performances of topologies including quality of waveforms of output voltage, cost, complexity and reliability are selected...
Soft errors, which have been a significant concern in memories, are now a main factor in reliability degradation of logic circuits. This paper presents a power-planning-aware methodology using dual supply voltages for soft error hardening. Given a constraint on power overhead, our proposed framework can minimize the soft error rate (SER) of a circuit via selective voltage assignment. In the 70-nm...
Bias Temperature Instability (BTI) becomes one of the most important reliability issues for nanometer process devices. We focus on aging degradation by BTI because it is known as one of the dominant factor that determines life time of circuits. In this paper, we show circuit delay degradation characteristic of BTI using the circuit simulation. The delay increase 15% after 10 years stress.
We elaborated a new ultra low-power nanometer circuit design methodology by introducing statistical fluctuations in advanced technology nodes as noise sources causing computational errors. The modeling is performed on sub-50 nm technology node to create a statistical performance metric. The relationship between the probability of error and the circuit noise for a variety of different configurations...
As technology is scaled down, supply voltage and gate capacitances are reduced which degrades the reliability of the circuits. For near sub-threshold region design, this causes even more serious reliability issues because the supply voltage is reduced to near the threshold voltage of the devices. Soft error is one such phenomenon which changes internal node voltage due to external noise. Hence it...
Channel Hot Carrier (CHC) and Negative Bias Temperature Instability (NBTI) degradation has been studied in pMOSFETs with and without channel strain. The results show larger CHC degradation and a neglegible influence of NBTI on strained pMOS devices. The degradation effects are modeled to be introduced in a circuit simulator. The simulations of a CMOS inverter, which has been chosen as example circuit,...
In this paper, physics-based IGBT and diode models are used to simulate two 3-phase VSI systems using different power modules in SABER. The device parameters for two standard SEMIKRON power modules, the 1200 V/75 A single chip module and the 1200 V/300 A multi-chip module, are extracted following parameterization procedure. The effects of three typical degradations are considered, including solder...
The task of achieving reliability against transient faults poses a significant challenge due to technology scaling trends. Several optimization techniques have been proposed in the literature for preventing soft errors in logic circuits. However, most approaches for avoiding soft errors in logic circuits have significant overheads in terms of delay, area or power. In this work, we propose a circuit...
We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
The soft-error vulnerability of flip-flops has become an important factor in IC reliability in sub-100-nm CMOS technologies. In the present work the soft-error rate (SER) of a 65-nm flip-flop has been investigated with the use of alpha-accelerated testing. Simulations have been applied to study the flip-flop SER sensitivity in detail. Furthermore, an easy-to-use approach is presented to make an accurate...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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