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In this paper, we analyzes the coupling capacitance between TSV-TSV, TSV-Metal interconnects, and TSV-Active device. This paper presents a complete analysis of coupling capacitance of TSV-TSV structures. As TSV parasitic capacitance is less than other conventional IO structures' capacitance, therefore TSV technology results in lower I/O power consumption, which makes it suitable for low power applications...
In transition to ultra deep sub-micron (UDSM) design technology nodes, fill synthesis solutions have increasingly caused performance impacts to the interconnect design, due to the parasitic capacitances induced by the dummy fill structures. Meeting chemical mechanical polishing (CMP) density design rules alone is no longer sufficient. Large spacing setbacks between functional interconnects and dummy...
In this paper, die-to-die vertical coupling between clock tree and spiral inductor in three-dimension (3-D) IC is analyzed, and equivalent circuit model for analysis of vertical coupling mechanism is proposed. Analysis and modeling are verified by measurement results of a designed and fabricated test vehicle. The test vehicle has two stacked dies with clock tree or a spiral inductor.
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