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In this paper, Si Schottky-barrier diodes (SBD's) fabricated in CMOS process are shown to be suitable for THz imaging applications. We firstly present a physical-based equivalent circuit model for Si Schottky diodes fabricated by standard 130nm CMOS technology in which I-V, C-V and RF performance are covered. Secondly, the developed transmission Line (TL) model are employed to optimize T-type matching...
In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching...
Design of a Non-Destructive Test (NDT) set-up for short-circuit tests of 1.7 kV, 1 kA IGBT modules is discussed in this paper. The test set-up allows achieving short-circuit current up to 10 kA. The important objective during the design of the test set-up is to minimize the parasitic inductance and assure equal current sharing among the parallel connected devices. Achieving of a low inductance level...
<?Pub Dtl?>We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of -parameter data for GaAs-based...
This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/junction-barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on...
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