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Wide bandgap materials have become very attractive for power electronics due to their physical properties that allow junction temperatures up to a theoretical limit of 600°C. In contrast, the maximum operation temperature of conventional silicon semiconductors is limited to approximately 200°C. The high-temperature operation of wide bandgap switches allows an increasing power density of power converters...
In the present study, the effect of nickel nanoparticle doping on the dielectric properties of lead bismuth niobate zirconate titanate, P(BN)ZT solid solution were investigated. P(BN)ZT powder doped with nickel in the composition of (1-x) PBNZT-xNi when x = 0.00, 0.02, 0.04, 0.06, 0.08 and 0.1 percent by mole. P(BN)ZT doped with nickel powder were calcined at 900??C for 2 h and sintered at the temperature...
Molecular dynamics simulations are used to simulate the energetic reaction of Ni and Al particles at the nanometer scale. The effect of particle size on reaction time and temperature for separate nanoparticles has been considered as a model system for a powder metallurgy system. Coated nanoparticles in the form of Ni-coated Al nanoparticles and Al-coated Ni nanoparticles are also analyzed as a model...
The present study investigates the effects of high voltage impulses and low frequency high current pulses on Ni powder compacts and on alloys like Ni80Si20 or Ni95Si5. An increase in density has been observed due to pulse application on samples of ball milled Ni powder and Ni80Si20. It is suggested that pulse application along with simultaneous pressure application be employed in field assisted sintering...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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