The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An 85–115 GHz three-stage monolithic millimeter-wave integrated circuit (MMIC) amplifier based on 90-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) devices has been designed. The PHEMT (0.09×2×25um2)used in this design has a dc transconductance (gm) of 1640 mS/mm with ft =247 GHz and fmax=392 GHz. The monolithic three-stage amplifier demonstrates a small-signal gain of...
A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been achieved by using InAlAs/GaAs strained-layer superlattices as dislocation filter layers.
We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for...
We demonstrate high quality InAlAs epitaxial growth by metalorganic vapor phase epitaxy and wide band gap solar cell fabrication. X-ray diffraction and transmission electron microscopy were used to characterize the crystalline quality of the epitaxial InAlAs grown. InAlAs solar cells lattice-matched to InP were grown and electrically characterized under AM 1.5 global 1-sun illumination. Window layers...
We reported the InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LED) grown on patterned sapphire substrates (PSS). The surface morphologies for samples grown on the "dome" PSS in different growth stages were observed by scanning electron microscopy (SEM). The fully coalescence of the growth fronts was achieved for 30 minute growth sample with the "bumps" surface...
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
InGaAsP membranes are bonded to carrier substrates using Au/Au and Van der Waals and bonding. Photonic crystal defect cavities within membranes bonded onto semiconductor and sapphire substrates are found to lase continuous wave under optical excitation.
Two new fields are introduced to MEMS/NEMS: a nanogenerator that harvests mechanical energy for powering nanosystems, and strained induced piezotronics for smart MEMS. Fundamentally, due to the polarization of ions in a crystal that has non-central symmetry, such as ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. The principle of harvesting...
This study presents a simple process to implement inorganic nanoporous anodic aluminum oxide (named np-AAO) on PET/ITO substrate for flexible liquid crystal display (flexible-LCD) application. This is the first time to demonstrate micromachined inorganic np-AAO on PET/ITO substrate as reservoir and alignment layer for liquid crystal (LC). The np-AAO offers three advantages for flexible-LCD, (1) the...
We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ~ 45% and negligible saturation up to ~ 300 A/cm2.
Frame assisted membrane transfer process was developed to transfer large area crystalline semiconductor nanomembranes on flexible plastic substrates. InP nanomembranes as large as 2cm×2cm was transferred successfully. Large area flexible photodetectors, solar cells and LED arrays all have been demonstrated experimentally, based on transferred InP nanomembranes.
Hybrid integration of III-V compound semiconductors onto silicon-on-insulator (SOI) substrate is discussed from material, device and application perspective. Recent progress in integration technology and device optimization is reviewed.
In this paper, the effects of process parameters, including nanopore formation, nanopore size, and surface cleaning conditions after nanopore formation on the characteristics of InAs SCQDs grown on GaAs are examined. The influence of MBE growth parameters on SCQD formation and approaches toward optimization of structural and optical properties will also be discussed.
In this report we describe fabrication and (photo-)electrical measurements of thin-film structures consisting of sequentially deposited nanocrystalline silicon (nc-Si) and phthalocyanine semiconductor layers.
We present the first demonstration of a III-V MOSFET heterointegrated on a large diameter Si substrate and fabricated with a VLSI compatible process flow using a high-k/metal gate, self-aligned implants and refractory Au free ohmic metal. Additionally, TXRF data shows that with the correct protocols III-V and Si devices can be processed side by side in the same Si fabrication line The Lg = 500 nm...
Present status of membrane BH-DFB lasers toward on-chip optical interconnection in next generation LSI will be presented. Current injection type DFB lasers were realized by a direct bonding process on an SOI substrate and also realized by adopting a lateral current injection structure grown on a semi-insulating InP substrate.
The optimization of InGaN/GaN multiquantum wells structure based on Si-doped GaN substrate for λ~445 nm is performed. Advance simulation for a self-consistent laser model combined with band-structure and free-carrier gain calculations is employed to study effects such as waveguiding, carrier transport and heat flux. Enhancement in output power of the optimized structure is calculated. It...
Lattice-matched (x =0.18) AlxIn1- xN epilayers were grown on GaN/ patterned sapphire substrate (PSS ) (0 0 0 1) and GaN/ unpatterned sapphire substrate (UPSS) (0 0 0 1) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown AlInN epilayers on the PSS and UPSS were compared. Structural characteristics and surface morphology optical properties of the AlInN epilayers were investigated...
The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.