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Amorphous silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on the glass. The structural characteristics, deposition rate, optical band gap and photosensitivity of the silicon-germanium thin films had been investigated at different substrate temperatures. It indicated that the substrate temperature had nothing to do with the crystallization...
Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature...
Ga2-2xIn2xO3 films with different indium content x [In/(Ga+In) atomic ratio] have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The preparation, structural and photoluminescence (PL) properties of the Ga2-2xIn2xO3 films were investigated. The XRD analysis revealed that the film with high Ga content exhibited monoclinic structure of Ga2O3 and...
Na element was introduced into preparation of Zn0.8Mg0.2O thin films, and high quality c-axis Na/Mg co-doped zinc oxide (ZnO) films with a nominal composition of Zn0.8-xNaxMg0.2O were prepared on pyrex glass substrates by sol-gel spin-coating method. Effects of Na composition on structural and optical properties of the films were investigated. Experimental results show that both Na and Mg elements...
We reported the InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LED) grown on patterned sapphire substrates (PSS). The surface morphologies for samples grown on the "dome" PSS in different growth stages were observed by scanning electron microscopy (SEM). The fully coalescence of the growth fronts was achieved for 30 minute growth sample with the "bumps" surface...
The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal...
The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ~ 68 μA/cm2 has been drawn at the applied...
In this work, polycrystalline zinc nitride films were prepared on Si and glass substrates by rf magnetron sputtering in N2 ambient using Zn as a target. Substrate temperature (Ts) was different for each deposition process ranging from 298 K to 523 K. Optical transmission experiments showed that the optical band gap of the resultant layers decreased as Ts increased. X-ray diffraction scans presented...
We present a study of Ti implanted Si layers with doses in the 1013-1016 cm-2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm-2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of...
Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
We have developed a silane-free atmospheric-pressure plasma Si deposition process and investigated the properties of the deposited films by fabricating strain gauge type pressure sensors for the first time. The Si deposition process, which is known as plasma-enhanced chemical transport, utilizes the temperature difference between the solid Si source and the substrate in atmospheric hydrogen plasma...
In this report we describe fabrication and (photo-)electrical measurements of thin-film structures consisting of sequentially deposited nanocrystalline silicon (nc-Si) and phthalocyanine semiconductor layers.
In this research, zinc oxide films were prepared on glass substrates by hydrothermal synthesis and metal-organic chemical vapor deposition (MOCVD) respectively. A nanostructured layer of flurocarbon compounds with low surface energy was formed on the films by low-temperature dielectric barrier discharge plasma enhanced chemical vapor deposition (DBD-PECVD), in order to enhance the hydrophobicity of...
Porous silicon technology offers a simple, wide dynamic range technique for tuning the refractive index of silicon in multilayer structures. However, the refractive index values are very sensitive to fabrication parameters, oxidation and other factors. In this work we investigate some possible causes of refractive index change in porous silicon (PS) fabricated by electrochemical etching of silicon...
ZnO thin film is grown on luminescent glass substrate by so-gel method. The structural and morphological characterization demonstrates the formation of ZnO with wurtzite structure. Temperature dependent photoluminescence (PL) of ZnO thin film on the glass substrate has been investigated from 10 to 300 K. The results indicate that the characteristic emission of glass substrate and the excitonic-related...
RF magnetron sputtering gas pressure and substrate temperature on Al-doped ZnO (ZAO) thin film optical performance has important implications. Al-doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering technology. We realized ZAO films with the better performance by adjusting and optimizing the sputtering gas pressure and substrate temperature. Using UV-vis spectrophotometer tested the...
Production of GaN films by metal-organic chemical vapor deposition (MOCVD) is widely used way of the world. MOCVD production in China the concept and production equipment still have a gap with the international, so do not have the advantage of international competition. This article describes some results of GaN film grown on sapphire by MOCVD in recent year. author will discuss those results base...
The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.
Carbon thin films were deposited on Silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C10H16O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density...
Aluminum-doped zinc oxide (AZO) is one of the promising transparent conductive oxide materials, which is expected to be an alternative to tin-doped indium oxide (ITO) that for long has been widely used in industry. The authors have been engaged in the development of AZO deposition process using inductively-coupled plasma assisted sputtering in a couple of years. This paper reports the results showing...
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