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We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
The optoelectronic characteristic of a p-i-n thin-film phototransistor is analyzed by comparing an actual device with device simulation. It is found using the actual device that the detected current is maximized when the control voltage is equal to the applied voltage. It is also found using the device simulation that a depletion layer is widely formed at that voltage because the electron mobility...
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