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We have evaluated magnetoresistance (MR)effect of a Ga-Sn-O (GTO) film deposited using mist chemical vapor deposition (CVD). It is found that the as-deposited film shows negative MR effect, whereas the annealed film shows positive MR effect. We assume that this phenomenon occurs because the carrier transportation shifts from the Anderson localization to band transportation as the film structure changes...
We are researching Ga-Sn-O (GTO) thin film as a potential material for future semiconductor devices. In this study, we investigate the GTO thin film using Hall measurement. A GTO film is deposited using RF magnetron sputtering, and annealed using electric-furnace annealing in air at temperature of 350 °C. We utilize van der Pauw method of the Hall measurement with slight modification, where the Hall...
Defects in crystalline InGaZnO4 (IGZO) powder sample induced by plasma were evaluated with comparing the defects in pure constituent materials of In2O3, Ga2O3 and ZnO induced by plasma. ESR signals in IGZO observed at g = 1.939 (signal A) and g = 2.003 (signal B) were different from the g factors observed at g = 1.969 in Ga2O3 and at g = 1.957 in ZnO. Intensity of the ESR signal B was decreased with...
We have developed a magnetic-field line sensor using poly-Si micro Hall devices. First, we fabricate the micro Hall devices using low-temperature poly-Si fabrication processes. Next, we measure the dependences of the Hall voltage (VH) on the magnetic field (B) for each micro Hall device and verify that VH is linear to B although VH has an offset voltage that varies among each device even if B is zero...
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