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Neural networks are information processing models based on the human brain, and they have been activity studied. However, in order to realize the hardware of the neural network, it is necessary to achieve high integration. In this study, we fabricated synapses for neural networks using the Ga-Sn-O (GTO) thin films, which is rare-metal-free amorphous oxide semiconductor. The synapses are planar type,...
The flatpanel imager used for the new type magnifying viewer was able to detect the difference in brightness and succeed in character detection. However, the outline part of the character was blurred and the reading accuracy was low. In this research, a liquid crystal lens was used to reduce irregular reflection that is a cause of reduction in reading accuracy of the flat panel imager. As a result,...
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution...
We are researching Ga-Sn-O (GTO) thin film as a potential material for future semiconductor devices. In this study, we investigate the GTO thin film using Hall measurement. A GTO film is deposited using RF magnetron sputtering, and annealed using electric-furnace annealing in air at temperature of 350 °C. We utilize van der Pauw method of the Hall measurement with slight modification, where the Hall...
We propose a novel extraction method of trap densities in thin-film transistors, which utilizes advantages of both capacitance–voltage ( –) and field-effect conductance (F-E) methods. First, the threshold voltage is obtained from the – characteristics. Next, the – method is used below . Finally, the F-E method is used above , where the surface potential...
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