The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Wehave evaluated thin-film biostimulating device using thin-film transistors (TFTs). We measured the stimulating current in the in-vitro experiment. It was found that sufficient current can be obtained even if some load resistance is attached. By comparing the results for the different mold area, the resistance of the TFT, pad, and phosphate buffered saline (PBS) can be separated. It is found that...
Neural networks are computing models based on human brains. We propose a neural network using a field-programmable gate array (FPGA) for neurons and amorphous In-Ga-Zn-O (a-IGZO) thin films for synapses. It is found that electric current in the a-IGZO thin film gradually decreases along the time. On the other hand, the degradation does not occur when light is irradiated. These phenomena can be utilized...
We are developing device-level neural networks using poly-Si TFTs. We succeeded in dramatically reducing the number of transistors in neurons and synapses to integrate a lot of devices, and we also succeeded in actually checking the operation of learning of logics. In this presentation, for the purpose of improvement of learning efficiency, we changed the synapse TFTs from the SD structure to the...
We have developed a magnetic-field line sensor using poly-Si micro Hall devices. First, we fabricate the micro Hall devices using low-temperature poly-Si fabrication processes. Next, we measure the dependences of the Hall voltage (VH) on the magnetic field (B) for each micro Hall device and verify that VH is linear to B although VH has an offset voltage that varies among each device even if B is zero...
Trap densities in the channel layers of ZnO thin-film transistors have been extracted. First, the low-frequency (low-f) capacitance–voltage – characteristics are measured using the customized measurement system. Next, the surface potential is calculated from the low-f – characteristic, and the surface potential gradient is calculated by applying Gauss's law. Finally, the spatial profile...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.