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We report the large-scale fabrication and characterization of self-aligned very-high frequency (VHF) resonant-body carbon nanotube (CNT) field-effect transistors (RB-CNTFETs) in a dual-gate configuration. For the first time, an integration density of >106 RB-CNTFETs/cm2, a yield of ∼ 80% and nano-precision have been achieved together. Electrical actuation/detection and novel in situ upward/ downward...
Self-aligned suspended-body single-walled carbon nanotube field-effect-transistors (SWCNT FETs) have been demonstrated with efficient and independent electrostatic control by two laterally placed independent gates spaced less than 100 nm away from the CNT channel. The operation of the suspended-body SWCNTFETs, in double-gate (DG) mode and single-gate (SG) mode, is analyzed in detail. Strong interface...
For the first time, self-aligned suspended-body carbon nanotube field-effect-transistors (CNTFETs) with efficient and independent electrostatic control by two laterally placed independent gates spaced less than 100 nm away from the CNT channel have been demonstrated. A precise positioning method using resist trenches is used for their fabrication. A superior control of I–V characteristics by two lateral...
Carbon nanotubes (CNTs) have been intensively studied for nanoelectromechanical systems (NEMS) applications owing to their remarkable electrical and mechanical properties. Efforts have been made in single-walled CNT field-effect transistor (SWCNTFET) based ultrasensitive mass detection, radio-frequency (RF) signal processing, etc [1]. However, current techniques of manipulating CNTs (including: in-situ...
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