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Mechanism of photo-leakage current in the ZnO TFTs has been analyzed by comparison between the light irradiated TFTs and indium (In) ion implanted TFTs where the selected areas of the channel region were irradiated or implanted. In case of the TFT with In ion implantation at a source region, the positive charge of ionized donors at the source region lowered the potential barrier at the source electrode...
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