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The influence of dry-etching (D/E) damage during the source/drain (S/D) electrode etching process on the electrical properties of a bottom-gate In-Ga-Zn-O thin-film transistor (TFT) was investigated by varying the thickness of the etch-stop layer (ESL). For a thicker ESL of 200 nm, electrical properties of the TFTs with S/D electrodes formed by dry and wet-etching were comparable. However, an anomalous...
Defects in crystalline InGaZnO4 (IGZO) powder sample induced by plasma were evaluated with comparing the defects in pure constituent materials of In2O3, Ga2O3 and ZnO induced by plasma. ESR signals in IGZO observed at g = 1.939 (signal A) and g = 2.003 (signal B) were different from the g factors observed at g = 1.969 in Ga2O3 and at g = 1.957 in ZnO. Intensity of the ESR signal B was decreased with...
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