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Transparent In2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using In2O3 powder target. The transmittance of the In2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the In2O3 thin film would be applicable for the...
Defects in crystalline InGaZnO4 (IGZO) powder sample induced by plasma were evaluated with comparing the defects in pure constituent materials of In2O3, Ga2O3 and ZnO induced by plasma. ESR signals in IGZO observed at g = 1.939 (signal A) and g = 2.003 (signal B) were different from the g factors observed at g = 1.969 in Ga2O3 and at g = 1.957 in ZnO. Intensity of the ESR signal B was decreased with...
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