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We have evaluated optical and electrical characteristics of Ga-Sn-O (GTO) films deposited using mist chemical vapor deposition (CVD). It was found that the GTO film is transparent, which suggests the energy gap is wide. The X-ray diffraction (XRD) indicated that the GTO film was crystallized, but the crystal structure is not clarified now. It was also found that the sheet resistance decreases as the...
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution...
We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga∶Sn=1∶3, On the other hand, for the thin films for Ga∶Sn=3∶1, both the transmittance...
We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special...
Rare metal free SnO2 / Al2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO2 / Al2O3 powder target. The transmittance of the SnO2 / Al2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO2 / Al2...
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