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We have developed a hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse. However, the conventional hybrid-type sensor has a disadvantage...
We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution...
We are developing hybrid-type temperature sensors using poly-Si thin-film transistors (TFTs). In this study, first, we evaluate the characteristic change of the off-leakage current of the TFT by changing the temperature several times. It is found that there is no historical effect even if the temperature changes very much. Next, we evaluate that by applying the actual driving condition. It is found...
We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different...
We have developed a hybrid-type temperature sensor using n-type low-temperature processed poly-Si thin-film transistors. The advantages of the hybrid-type temperature sensor are that the large temperature dependence of the off-leakage current can be utilized, and simultaneously only a digital circuit is required to count the digital pulse.
We have evaluated temperature dependences of transistor characteristics in n-type, p-type, and pin-type poly-Si TFTs for temperature sensor application. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents, which are the same results as what were previously reported. Moreover, the temperature dependence...
We have developed a hybrid-type temperature sensor using thin-film transistors. First, we evaluate temperature dependences of transistor characteristics and find that the temperature dependence of the off-leakage current is much larger than that of the on current. Next, we combine a transistor, capacitor, and ring oscillator to develop the hybrid-type temperature sensor and detect the temperature...
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