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We have developed neuron MOS devices using TFTs. We fabricated and evaluated neuron MOS inverter, which can be also utilized as a variable threshold voltage inverter, and neuron MOS source follower, which can be also utilized as a digital-analog converter. The neuron MOS devices indicate that TFTs have great potential for application to artificial neural networks.
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltage is beyond a threshold voltage.
We have evaluated multiple-input NAND circuits using polycrystalline silicon thin-film transistors and found that the output pulse became degraded for the 3-input NAND circuit. Moreover, we have fabricated a set-reset flip-flop (SR-FF) circuit using the 2-input NAND circuits and confirmed that the SR-FF circuit operated correctly.
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