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This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Overall, we demonstrate that by optimizing the Ge retrograde design, one can improve the large signal performance to provide 66.5% Power-Added-Efficiency...
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate.
An isolated vertical PNP BJT with fT of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest fT ever published for a homojunction PNP device, as well as for a modular PNP in a BiCMOS technology. The VPNP device is fabricated using a low complexity integration scheme and is optimized...
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