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In order to reduce the thermal stress in the GaAs films grown on Si, GaAs films have been grown on thin Si substrates and characterized by cathodoluminescence (CL) and transmission electron microscopy (TEM). The CL and TEM measurements reveal that, using thin Si substrates, thermal stress in GaAs films is reduced resulting in the lower threading dislocation density, and crystalline quality of GaAs films have dramatically been improved.