The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Direct power injection (DPI) tests measure the electromagnetic immunity of IC and its critical circuit components against conducted RF disturbances. This paper presents electromagnetic interference (EMI) robust 6V to 42V pre-regulator and bandgap reference circuit designed for an automotive LIN transceiver IC in AMS 0.35µm high-voltage CMOS process. Detailed analysis for the behavior of bandgap reference voltage in presence of RF injected noise is presented. This paper also elaborates the details of DPI simulation setup and parasitic models that are essential to predict failures in the design phase itself. Experimental results confirm the proposed design and optimization strategy based on coupling capacitors.