The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Site-controlled single Ge quantum dot was grown on patterned silicon-on-insulator substrate. The single dot was then precisely embedded into a photonic crystal microcavity. Resonant photoluminescence was observed from the single Ge dot in the cavity.
We demonstrate that the unconventional photon blockade can produce single photons under pulsed excitation at high repetition rates. Our proposal relies on two coupled photonic crystal cavities and on the Kerr nonlinearity of silicon.
An all-silicon passive optical diode based on cascaded photonic crystal L3 cavities is demonstrated. Nonreciprocal transmission ratio of 30.8 dB and insertion loss of 8.3 dB are realized in the device.
1.5µm degenerate-frequency photon pairs are generated in a silicon micro-ring cavity by reverse degenerate spontaneous four wave mixing. Their quantum interferences in Mach-Zehnder interferometers are demonstrated, showing their potential in quantum metrology and quantum information.
We experimentally demonstrate ultra-high quality factors (Q = 1.45×106) in evolutionary optimized 2D L3 photonic crystal nanocavities fabricated in Si slabs. Together with ultra-small effective mode volumes ∼ 0.96(λ/n)3, such a nanocavity offers a new platform in future integrated nanophotonics.
We propose a novel low-temperature layer transfer technique using meniscus force and midair cavity structure. Local transfer of thermally-oxidized SOI layer to glass was successfully carried out at 80 °C. N-channel MOSFET fabricated on glass using the SOI layer showed a very high field-effect mobility of 998 cm2V−1 S−1 and a low threshold voltage of 3.0 V. Single-crystalline silicon MOSFETs are successfully...
We report on the first prototypes of hybrid detectors for neutrons from the INFN HYDE project. Devices consist of 3D silicon sensors coupled to PolySiloxane-based converters. The sensor design and fabrication technology are presented, along with initial results from the functional characterization of the devices in response to radioactive sources and neutron beams of different energies.
Various lasers and light sources on Si via heterogeneous integration of Si/III–V have been reported based on direct growth on Si [1] or wafer bonding technology [2–4]. We reported earlier optically-pumped Si membrane-reflector vertical-cavity surface-emitting lasers (MRVCSELs) fabricated by low-temperature membrane transfer printing processes [5, 6]. Here we report electrically-pumped devices based...
We demonstrate a novel method to define high Q silicon photonic crystal cavities with functional polymer cladding with ultra precision using spatially resolved electron beam bleaching of a chromophore doped polymer.
We present a GaSb-VCSEL concept using SOI-based HCGs as highly reflective mirrors. The optical properties of two different grating designs are simulated using RCWA. These gratings show strong and broadband reflection around 2.3 µm.
We report a silicon photonic tunable add/drop multiplexer based on thermally tuned grating Fabry-Perot etalons embedded in a Mach-Zehnder interferometer. A filter bandwidth of 100GHz is achieved within a broad 60nm wide stopband.
We demonstrate for the first time on-chip dynamic frequency conversion. The signal and the switching pulse both propagate in the silicon photonic crystal waveguide. During dynamic transition switching pulse takes over the signal.
A concept is proposed and realized for post-fabrication trimming as well as new structures fabrication on functionalized silicon platform. Electron beam bleaching of a chromophore doped polymer cladding is applied.
In this paper, a microreactor chip integrated with focus ultrasonic transducers prepared by a modified Chemical Foaming Process(CFP) is presented. The device operates by trapping air bubbles within micro pits located in the center of silicon cavities. Focused acoustic waves induced by the spherical shell resonance excite the trapped air bubbles vibrate, resulting in acoustic streaming, which disrupts...
Through-silicon via (TSV) technology known as the core of the next generation of 3D integration has drawn more and more attention. However, due to its high cost and yield problems, it has not been used widely. Nevertheless, TSV is becoming a main stream interconnect method for CIS (CMOS image sensors) packaging. In order to assess the reliability behavior of typical CMOS image sensor such as delamination...
In this paper, we demonstrate an innovative method for fabricating the reference cell for miniaturized atomic clock application, allowing low-cost wafer level batch fabrication and assembly. This method uses silicon micromachining techniques, low temperature anodic bonding technique and Chemical Foaming Process (CFP) for producing spherical alkali atom vapor cells. The Rb (Rubidium) vapor cell has...
In this paper, an improved chemical foaming process (CFP) for wafer-level glass cavities will be demonstrated for volume production in a clean room. First of all, suitable foaming agents transferring techniques are investigated to avoid powder pollution to the chips in a clean room. In addition, the precise controlling of the sizes of the glass cavities is studied theoretically and experimentally...
We propose a method to detect nanomechanical variations in the three dimensional space with a shoulder-coupled pillar-inserted aslant photonic crystal nanocavity resonator. FEM and 3D-FDTD simulation software are employed to investigate the sensing characteristics. With high quality factor of the aslant nanocavity and the optimized structure, high sensitivity of nanomechanical sensing can be achieved...
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the...
The fabrication of precise hemispherical shape is challenging with standard planar lithography techniques. A suitable alternative is the fabrication by inkjet printing. This paper presents a method based on drop-on-demand inkjet printing on pre-patterned silicon substrates allowing the controlled fabrication of SU-8 hemispherical cup-like structures with inner cavities of sub-nano-liter volumes. Examples...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.