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A Novel scaling theory for Single Gate AlInSb/InSb High Electron Mobility Transistors (HEMTs)is derived by solving the 2D Poisson equation. To combat with the issues introduced by device scaling,Effective Conductive Path Effect (ECPE) has been taken into account.From literature, scaling Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)with ECPE has shown stronger immunity towards short...