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Oscillations in power electronic circuits with fast switching semiconductors are commonly known and the corresponding parasitic elements have been investigated in multiple literature. However, this paper investigates the triggering of these electromagnetic interference (EMI)-critical oscillations. An analytical description is derived using a boost converter circuit. Based on this description an optimization...
In this study the switching characteristics of semiconductors are investigated as a main source of radiated electromagnetic interference (EMI). Especially, characteristic oscillations after the switching process influence the EMI characteristic of the circuit under investigation in the high frequency range. A method is introduced that analyses the turn-on and the turn-off characteristic of a MOSFET...
A highly detailed evaluation of the influence of parasitic elements, e.g. semiconductor inductances and heat sink capacitances, on radio frequency noise of a power electronic circuit is presented, using measurements in time domain. Fast switching semiconductors trigger oscillations during the switching process, that are critical under electromagnetic interference (EMI) considerations. Separate equivalent...
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