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The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC MOSFET is investigated at 6 kV dc-link voltage. The study aims to present the behavior of the device during short-circuit transients as it sustains increasing short-circuit pulses during its lifetime. As the short-circuit...
Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because...
The short-circuit capability of a power device is highly relevant for converter design and fault protection. In this paper a 10kV 10A 4H-SiC MOSFET is characterized and its short circuit withstand capability is studied and analyzed at 6 kV DC-link voltage. The test setup for this study is also introduced as its design, especially the inductance in the switching loop, can affect the experimental results...
The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced...
The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses...
This paper discusses the design of a setup for short-circuit (SC) testing of 10 kV 10A 4H-SiC MOSFETs. The setup can achieve voltages up to 10 kV and currents in excess of 100A. The main objective during the design was to obtain low parasitic inductance throughout the setup, while at the same time, reduce the complexity and size of the setup by avoiding series connection of DC-link capacitor and by...
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