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Conventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind. In this paper, for the first time, performance and reliability codesign approach using 3-D TCAD has been presented for various superjunction (SJ) type DeMOS devices. In this context, how to effectively utilize the SJ concept in a DeMOS...
This paper presents the design of RESURF based non-conventional LDMOS and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thickness, on device performance and premature avalanche breakdown. To avoid undesirable implant-drain punch-through, a boundary of limits is proposed near...
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