The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Enhancement-mode AlGaN/GaN MOSHEMTs have been widely used in power electronic applications thanks to its superior electrical characteristics [1, 2]. Several methods have been proposed to fabricate E-mode AlGaN/GaN HEMTs like gate recess [3], F− doping at the AlGaN barrier layer [4], and p-type GaN cap layer [5]. Nevertheless, the high threshold voltage and high output current is hard to obtain simultaneously...
This study was aimed to design an electrocardiograph (ECG) system by the 0.35 μm CMOS technology. In this study, a two-stage operational amplifier was taken as the building block for the design of instrumentation amplifier and filters. In our measurement, excellent performance was verified by the fabricated chips.
This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability...
We propose and demonstrate an Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with the HfO2/Al2O3 dual gate dielectrics by using sputtering/hydrogen peroxide (H2O2) oxidation techniques. The present HfO2/Al2O3 dual gate dielectrics MOS-HEMT can combine the advantages of both dielectric properties and the device performances such as output current, device gain,...
This work investigates the effect of post oxide annealing (POA) on the AlGaN/GaN MOS-HEMT with a gate oxide grown by the H2O2 oxidation technique. The experimental results suggest that the gate dielectric layer with the POA treatment improves the dielectric material quality and MOS-HEMT performances. The dielectric breakdown field (EBD) of Al2O3 is improved from 6.5 to 7.9 MV/cm. In addition, the...
Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO2/Al2O3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO2/Al2O3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT)...
This study proposes an integrated analog measuring interface IC chip module used for portable personal healthcare electrocardiograph (ECG) system by considering factors of chip size, weight, portability, and fabrication simplicity. An instrumentation amplifier with an active DC suppression feedback, a “driven right leg (DRL)” circuit, and an on-chip active low-pass filter (LPF) are included. The chip...
A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising...
In this work, the approaches to improve the organic solar cell with metal anode are studied. Under the hydrogen peroxide and ozone water treatment, the work function and surface roughness of metal anode are varied and hence to affect the fill factor (F.F.) and photocurrent of organic solar cells. By using hydrogen peroxide with diluted ratio of 1:70, the power conversion efficiency of the organic...
This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Ga0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting...
In this work, approaches to improve current efficiency of white organic light-emitting diodes (WOLEDs) with high color purity have been studied. The emission layer in devices consists of 2-(t-butyl)-9,10-bis(2'-naphthyl)anthracene (TBADN) blue host and 5,6,11,12-tetraphenylnaphthacene (rubrene) yellow dopant. The efficiency can be enhanced by using architecture of dual emission layers and hole-blocking...
High-temperature characteristics of a symmetrically-graded delta-doped InAlAs/InxGa1-xAs/GaAs (x=0.5 rarr 0.65 rarr 0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as deltaVth/deltaT, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.