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Starting with its 50th anniversary in 1992, I have seen 25 years of electron and photon device research at the DRC; let us look over this history and then guess at the future.
In the early days, the Device Research Conference (DRC) has played a seminal role in the initial announcement of breakthroughs that led to new and improved devices and chips found in today's semiconductor market menu. I will briefly cite personal and collegial examples of compound semiconductor breakthroughs that occurred during what I view as the miracle decade of 1965–1975. I cite this era because...
Twenty-five years ago I had the honor of serving as technical program chair for the 50th Device Research Conference. For the plenary session we invited grey beards: Chapin Cutler, Makoto Kikuchi, Jim Early, and Herb Kroemer. I enjoyed the talks and after the session a young attendee remarked how great it must have been to be involved in the device research the plenary speakers recounted. I agreed...
I review our recent study on realizing three-terminal spintronics devices for integration with CMOS VLSI. Three-terminal devices separate the current paths one for magnetization switching and the other for reading the state of magnetization, thereby, in principle, allow a relaxed operation window resulting in high speed operation compared to their two-terminal counterpart [1]. Of particular current...
It seems to be unavoidable that the first question that anyone asks when a new material is introduced fo electronic device applications is: “What mobility does this material have?” In fact, this question can be rather misleading, like in the context of graphene, where the absence of a bandgap immediately prohibits its use for transistor applications despite its outstanding mobility values. In addition,...
Many novel materials and device structures have been explored over the years in the quest for low-noise avalanche photodetectors (APD), which are attractive for a wide range of applications in imaging, communications, sensing, etc. This includes the introduction of heterojunctions to modify impact ionization rates [1], culminating in the proposal by Capasso et al. of a solid-state analog to the photomultiplier...
Transition metal dichalcogenides (TMDs) are promising for next-generation electronic and optoelectronic device applications. However, the development of a viable TMD device technology requires an effective strategy for making low-resistance contacts to these materials. In addition, large-area synthesis of low-defect TMD crystals is essential for transforming basic device studies into commercial products...
GaN-based HEMTs have demonstrated outstanding performance in solid-state power amplifiers [1]. Products of fT/fmax and three-terminal breakdown voltage are commonly cited to characterize the high frequency performance of power devices [2]. However, such metrics mix the results of small-signal measurements and DC breakdown measurements taken separately and therefore don't consider side effects of high...
In recent years, GaN trench MOSFETs have been actively investigated to achieve low on-resistance and high breakdown voltage [1-8]. The absence of a JFET region makes the trench MOSFET a favorable device structure to reduce the on-resistance. However, poor (electron) channel mobility in GaN trench MOSFETs lead to increased channel resistance. This could potentially result in reliability issues and/or...
Strained heteroepitaxial HEMTs without the mechanical support of a substrate have been demonstrated only for small-sized AlGaN/GaN membranes, i.e., the substrate was removed from within the immediate vicinity of the transistor area [1]. Such transistors have exhibited improved breakdown voltage and frequency response. However, wafer-scale substrate removal has been considered detrimental to the heterostructure...
We present small-signal measurements on graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency, fT, and power gain cutoff frequency, fmax, profiles as a function of current density or gate bias. AlGaN/GaN high electron mobility transistors (HEMTs) are suitable candidates for mm-wave and THz amplifiers. However their transconductance,...
One of the main challenges inhibiting the integration of 2D crystals into top-gate field-effect transistors (FETs) is deposition of a uniform, scalable, high-quality dielectric. The most common and controlled method of deposition of thin dielectric films is atomic layer deposition (ALD); however, the inert surface of 2D materials offers no nucleation sites for the ALD precursors, resulting in non-uniform...
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