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Recent advancements in the integration of nanoscale, single‐crystalline semiconductor ‘X’ on substrate ‘Y’ (XoY) for use in transistor and sensor applications are presented. XoY is a generic materials framework for enabling the fabrication of various novel devices, without the constraints of the original growth substrates. Two specific XoY process schemes, along with their associated materials, device...
Due to their high electron mobility, III–V semiconductors are promising channel materials for future devices [1]. InAs is one such promising material; however, due to the small bandgap (Eg∼0.36 eV) bulk devices are not feasible. In addition, heteroepitaxial growth of thin layers on Si is challenging due to the inherent lattice mismatch. Here, we present a platform developed for integration of single-crystalline...
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of nonepitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of crystalline InAs nanowires with high...
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