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We report on accurate modeling of GaN HEMTs for RF operation taking into account sheet charge density (ns) dependence of electron velocity in 2-dimensional electron gases (2DEGs). Electron velocity characteristics of the channel directly impact DC and high frequency transistor performance, and it is critical to understand velocity at all charge density and field conditions to accurately predict large...
Common-emitter operation was demonstrated in an N-polar tunneling hot electron transistor. Under collector-emitter bias of 7 V, small signal current gain $\sim 1.3$ , and voltage gain $\sim 4$ were simultaneously obtained for transistors with 27.5-nm base. This is the first report of a III-nitride hot electron transistor with small signal current gain and intrinsic voltage gain both greater than...
We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.
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