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In recent years, novel devices which use nanomagnets to store and transmit information have been a particular topic of interest. Many of these devices utilize dipolar coupling between nanomagnets to process or communicate information and the most important factor when designing these systems is knowing if two nanomagnets are perfectly coupled [1]. However, when modeling these devices, these nanomagnets...
Spin transfer torque MRAM (STT-MRAM) is one of the promising candidates as a scalable nonvolatile memory with high density, and CMOS compatibility [1], [2]. Interface perpendicular magnetic tunnel junction (PMTJ) shown in Fig. 1 has been demonstrated with the goal of reducing the switching current while maintaining sufficient nonvolatility [3]. However, previous studies report that PMTJ suffers from...
An outstanding challenge for humanity is to continue to understand how our brain works and invent technology to restore neural circuit functionalities. Many neural interfaces used for neuron cell cultures are flat, open, rigid, and opaque, posing challenges to reflecting the native microenvironment of the brain and precise engagement with neurons. Here we present a novel neural interface consisting...
We provide an initial perturbation to the channel, by applying a small E-field pulse of amplitude Ex=10−3 V/cm at the center. Power emitted due to positive feedback is then recorded at the measurement planes, depicted in Fig. 1b. Shown in Fig. 6a is the simulated emitted spectrum for two devices. Sharp self-sustained oscillations are observed at the plasmonic resonance frequencies. As expected, these...
Resistive random access memory (RRAM) is attractive as a promising candidate for next generation nonvolatile memory due to its potential scalability beyond 10 nm feature size using a crossbar structure, fast switching speed, low operating power, and good reliability. Cerium oxide has high dielectric constant and various valance states, making cerium oxide a potential material for RRAM application...
High performance RF switch components are vital for the successful implementation of a variety of system architectures, ranging from phased array radars and multi-function sensors to the wireless components of mobile phones and consumer electronics. FET based RF switches offer low power consumption, less demanding control biasing networks and fast switching capabilities compared to both PiN and RF...
We perform a comparative study of Negative Bias Temperature Instability (NBTI) reliability on compressively strained Germanium (s-Ge) Quantum Well (QW) Planar and FinFET p-type devices. We see electron trapping from the gate electrode in all these devices with applied negative stress. FinFETs show less ΔVT than Planar but with 1.8 times higher stress time exponent (n) and slower recovery rate than...
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide...
This work reports improved Ge n-channel gate stack performance using HfAlO high-k dielectric versus HfO2. ALD HfAlO high-k results in improved thermal stability for a 400 °C post high-k deposition anneal of gate stacks with thick (8 nm) as well as thin (2 nm) EOT. For thick EOT stacks Al incorporation mainly benefits (10% lower) EOT and interface state density (Dit) whereas for thin EOT stacks the...
We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET with a 2-GFET inverter, being highly scalable. The circuit is demonstrated using large-area chemical vapor deposition grown graphene and no doping...
Two dimensional materials represent the next frontier in advanced materials for electronic applications. Their extreme thinness (3 or less atoms thick) give them great flexibility, optical transparency and an unsurpassed surface-to-volume ratio. At the same time, this family of materials has tremendously diverse and unique properties. For example, graphene is a semimetal with extremely high electron...
Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (∼ 45∶1) fins. For devices with Lg = 560 nm, 20 – 32 nm fin width, and 600 nm active fin height, Ion/Ioff ∼ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.
A controllable and area selective doping process, especially for p-type Molybdenum disulphide (MoS2), is essential for the realization of various p/n junction-based devices. In this work, we demonstrate p-type doping of multilayer MoS2 with phosphorus (P) as a dopant using a CMOS-compatible plasma immersion ion implantation (PIII) technique. Detailed physical characterization including XPS and SIMS,...
Metal oxide thin-film transistors based on high-k dielectrics (ZrOx, HfOx, Al2Ox) are a promising technology with attractive performance (µeff ∼ 10–100 cm2/Vs, On/Off > 107) and high transparency (80–90%) [1]. Solution-processed routes to oxide TFTs can potentially leverage printing technologies to enhance material utilization and throughput. However, realizing the true benefits of solution-processed...
Graphene has been extensively researched over the past decade due to its outstanding electrical, optical and mechanical properties. Since charge carriers in graphene are confined within one atomic layer thickness, their transport properties are easily influenced by the surrounding medium. Recently, significant enhancement in the transport properties of graphene has been observed as it forms layered...
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