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We report on demonstration of GaN tunneling hot electron transistors (THETA) with dc current gain up to 14.5 in common-emitter configuration, which is highest value reported to date in GaN-based hot electron transistors. THETA is a promising candidate to obtain vertical high frequency transistors in GaN. In a THETA, an emitter-base (EB) barrier is applied to tunnel-inject hot electron beams, and a...
DC current gain greater than one was demonstrated in GaN tunneling hot electron transistors. At an emitter-base bias of 8 V, dc current gain is increased to 2.8. The results show the promise of GaN tunneling hot electron transistors for the next generation of high-frequency amplifiers. This work is funded by Office of Naval Research under the DATE MURI project (Program manager: Dr. Paul Maki).
Common-emitter operation was demonstrated in an N-polar tunneling hot electron transistor. Under collector-emitter bias of 7 V, small signal current gain $\sim 1.3$ , and voltage gain $\sim 4$ were simultaneously obtained for transistors with 27.5-nm base. This is the first report of a III-nitride hot electron transistor with small signal current gain and intrinsic voltage gain both greater than...
An analytical model for Quantum Cascade lasers based on rate equations adequately reproduces major transport and lasing characteristics, including the reduction of the differential resistance at threshold, saturation, and temperature performance.
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