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Hafnium silicate (HfSiO) has been identified as a promising candidate to replace silicon oxide/oxynitride as a high-κ material for gate dielectric applications. Nitrided hafnium silicate has been found to have a number of advantages in film performance. However, two-step processes have been commonly used, i.e. the first step is the deposition of HfSiO film by CVD, ALD or other techniques, and the...
Transition states for attack by H and OH at the C-H and C-I bonds of CH 3 I have been characterized at the Gaussian-2 level of theory. The results are employed in transition state theory analyses to obtain ab initio rate constants and product branching ratios. For the H reaction the major pathway is predicted to be I-atom abstraction, while for OH attack H-atom abstraction is faster than...
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