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Through silicon vias (TSVs) are key enablers of 3-D integration technologies which, by vertically stacking and interconnecting multiple chips, achieve higher performances, lower power, and a smaller footprint. Copper is the most commonly used conductor to fill TSVs; however, copper has a high thermal expansion mismatch in relation to the silicon substrate. This mismatch results in a large accumulation...
Through glass vias (TGVs) are a key component in glass-based interposers and microelectromechanical-system lid wafers. Magnetic-field-assisted self-assembly has been demonstrated earlier in fabrication of through silicon vias. Here we present an entirely maskless TGV fabrication process utilizing magnetic assembly. Femtosecond laser is used for ablative direct patterning of surface metal layers and...
Through silicon vias (TSVs) are used e.g. to create electrical connections through MEMS wafers or through silicon interposers used in 2.5D packaging. Currently available technologies do not address situations in which TSVs through unthinned wafers have to withstand large temperature variations. We propose using ferromagnetic Invar metal alloy for this purpose due to its low mismatch in heat induced...
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