Search results for: Tae In Lee

Items from 1 to 10 out of 10 results

article

Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Min Ju Kim, Changhyeon Lee, Eui Joong Shin, Tae In Lee, more

Advanced Functional Materials > 31 > 41 > n/a - n/a

With the recent interest in data storage in flexible electronics, highly reliable charge trap‐type organic‐based non‐volatile memory (CT‐ONVM) has attracted much attention. CT‐ONVM should have a wide memory window, good endurance, and long‐term retention characteristics, as well as mechanical flexibility. This paper proposed CT‐ONVM devices consisting of band‐engineered organic–inorganic hybrid films...

article

Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition

Min Ju Kim, Jaejoong Jeong, Tae In Lee, Jihye Kim, more

Macromolecular Materials and Engineering > 306 > 3 > n/a - n/a

Hybrid organic‐inorganic polymeric films are widely used in various areas, for encapsulation, dielectrics, super‐hydrophobic surfaces, membranes, and other applications, because of the features of their organic and inorganic components. The initiated chemical vapor deposition (iCVD) process is developed to synthesize hybrid polymeric films via this approach. However, the conventional iCVD process...

article

Large‐Area, Conformal, and Uniform Synthesis of Hybrid Polymeric Film via Initiated Chemical Vapor Deposition

Min Ju Kim, Jaejoong Jeong, Tae In Lee, Jihye Kim, more

Macromolecular Materials and Engineering > 306 > 3 > n/a - n/a

Front Cover: In article number 2000608 by Byung Jin Cho and co‐workers, hybrid organic–inorganic polymeric films are uniformly, conformally, and homogeneously synthesized on a large area by using a newly designed initiated chemical vapor deposition (iCVD) process with a dual shower head injection structure.

article

Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂

Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jungmin Moon, more

IEEE Transactions on Electron Devices > 2017 > 64 > 10 > 4242 - 4245

A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO₂/Ge substrate. Fermi-level depinning in Ti/GeO₂/n–Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen...

article

Investigation of Border Trap Characteristics in the AlON/GeO₂/Ge Gate Stacks

Yujin Seo, Choong-Ki Kim, Tae-In Lee, Wan Sik Hwang, more

IEEE Transactions on Electron Devices > 2017 > 64 > 10 > 3998 - 4001

Aluminum oxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO₂/Ge gate-stack are discussed in detail and compared with those in the Al₂O₃/GeO₂/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al₂O₃ in the gate stacks, the AlON gate-stack exhibits a reduced...

article

The Impact of an Ultrathin Y₂O₃ Layer on GeO₂ Passivation in Ge MOS Gate Stacks

Yujin Seo, Tae In Lee, Chang Mo Yoon, Bo-Eun Park, more

IEEE Transactions on Electron Devices > 2017 > 64 > 8 > 3303 - 3307

This paper investigates the impact of an atomic layer-deposited Y₂O₃ dielectric on the passivation of a GeO₂ layer in GeO₂-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y₂O₃ layer are evaluated at different Y₂O₃ thicknesses and annealing conditions in detail. Experimental results show that a Y₂O₃ layer thickness of 1.0 nm is required to serve...

article

Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Hyun Jun Ahn, Jungmin Moon, Yujin Seo, Tae In Lee, more

IEEE Transactions on Electron Devices > 2017 > 64 > 6 > 2599 - 2603

Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity (

$34~\mu \Omega \cdot \text {cm}$

) at 15 nm was obtained by N₂ + H₂ plasma treatment after Ni precursor injection. The formed NiGe film showed low specific contact resistivity (

$\rho _{c})$

values of 9.01

$\mu \Omega \cdot \text {cm}^{2}$

for an NiGe/n...

article

Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Tae In Lee, Yujin Seo, Jungmin Moon, Hyun Jun Ahn, more

Solid-State Electronics > 2017 > 130 > C > 57-62

The use of a GeO₂ interfacial layer (IL) between a high-k dielectric and a Ge substrate helps to reduce the interface state density in Ge MOS devices. We report that the presence of the GeO₂ IL changes the effective work function (eWF) of the gate stack when annealed after high-k dielectric deposition. The eWF is reduced from 4.31eV to 3.98eV for TaN and from 5.00eV to 4.44eV for Ni. Consequently,...

article

The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

Jungmin Moon, Hyun Jun Ahn, Yujin Seo, Tae In Lee, more

IEEE Transactions on Electron Devices > 2016 > 63 > 4 > 1423 - 1427

The effective work function (eWF) of Al-doped titanium carbide (TiAlC) metal electrodes prepared by atomic layer deposition shows a strong dependence on the underlying gate dielectrics. The eWF of TiAlC on HfO₂ shows a low value of 4.2 eV independent of the deposition temperature and process conditions, whereas that on SiO₂ shifted to a midgap value of 4.7 eV, and it was sensitive to the process conditions...

article

Su1488 Clinicopathological Characteristics of Patients With Pain After Endoscopic Submucosal Dissection for Gastric Epithelial Neoplasm

Jung-Wook Kim, Jae Young Jang, Tae In Lee

Gastrointestinal Endoscopy > 2015 > 81 > 5 Supplement > AB303

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