The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The 5G wireless revolution will bring some fundamental changes on the design of handsets and communication infrastructures, delivering over 10 Gbps download speed with unprecedented densely connected wireless devices. The 5G RF transmitters using phased-array MIMO (multiple-input and multiple-output) antennas will demand excellent power efficiency with high integration and linearity at the cm-Wave/mm-Wave...
Doppler-based non-contact vital signs (NCVS) sensors can monitor heart rates, respiration rates, and motions of patients without physically touching them. We have developed a novel single-board Doppler-based phased-array antenna NCVS biosensor system that can perform robust overnight continuous NCVS monitoring with intelligent automatic subject tracking and optimal beam steering algorithms. Our NCVS...
The incoming 5G revolution will dramatically increase the design complexity for handsets and communication infrastructures, demanding the RFIC and ASIC chipsets designers, network and system components vendors and telecom operators to provide viable 5G E2E (End-to-End) products and solutions before A.D. 2020. The broadband modulation bandwidth for RF transmitters (i.e., 250 MHz to above 1 GHz), stringent...
A highly efficient two-stage 15 GHz fully-integrated GaN power amplifier (PA) designed for 5G communication is reported. SPICE simulations show this two-stage PA achieves an output 1 dB compression POUT, 1dB = 32.2 dBm with 28.2 dB gain and 30.0% PAE (power-added efficiency) for CW operation at 15 GHz. Its PAE reaches 38.7% at POUT = 34.0 dBm with a gain of 22.0 dB. Simulations also suggest that dynamic...
This paper shows a highly-efficient SiGe power amplifier (PA) design where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and supply voltage. The monolithic PA, designed in 0.35-µm SiGe BiCMOS technology with through-silicon via (TSV) using continuous wave (CW) load-pull, passes the stringent LTE spectrum emission mask (SEM) at average linear POUT...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.