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Spin-transfer torque magnetic RAM (STT-MRAM), which uses a magnetic tunnel junction to store binary data, is a promising memory technology. With many benefits, such as low leakage power, high density, high endurance, and nonvolatility, it has been explored as an SRAM replacement for cache design or a DRAM replacement for main memory. Meanwhile, along with the continuous shrinking of CMOS process technology,...
Scratchpad memory (SPM) which is software-controlled SRAM has lower power consumption compared to cache. It is becoming widely used in CPU, GPU and embedded devices. Meanwhile, as CMOS technology continues shrinking, negative bias temperature instability (NBTI) has become a major reliability concern. Recent studies show that SRAM suffers from NBTI effect, so it is a significant issue for SPM. While...
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