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We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( $\mu$LED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type...
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.
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