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This paper reviews the use of UHF double class-E (class-E2) topologies for dc/dc power conversion. After introducing this attractive resonant converter in the context of the time-reversal duality principle, two different lumped-element networks are described for appropriately terminating the drain of the switching devices. Recent implementation examples, taking advantage of GaN HEMT processes, are...
A 915 MHz GaN HEMT-based class-E rectifier is proposed in this paper to be used for DC+AC wireless power recovery. Taking advantage of the time reversal (TR) duality principle, the rectifier was derived from a class-E inverter, whose output network was designed for high-efficiency operation over a wide range of resistive loads. The addition of an appropriate gateside termination allows the device...
In this paper, a GaN HEMT class-E power amplifier (PA) has been designed for efficiently operating under variable load resistance at the 750 MHz frequency band. The desired zero voltage switching (ZVS) of the device can be approximated for a wide range of resistive loads, by means of a simple inductive impedance inverter, derived from [1]. The load-pull contours, obtained from simulations, allowed...
This paper compares and discusses four techniques for model order reduction based on compressed sensing (CS), less relevant basis removal (LRBR), principal component analysis (PCA) and partial least squares (PLS). CS and PCA have already been used for reducing the order of power amplifier (PA) behavioral models for digital predistortion (DPD) purposes. While PLS, despite being popular in some signal...
In this paper, the design and implementation of a GaN HEMT class-E power amplifier and a Schottky diode class-E rectifier are described. Based on the widely known Linear Amplification with Nonlinear Components technique (LINC), and taking advantage of the spatial power combining capability of a dual-fed square patch, the highly efficient amplifier and rectifier may be incorporated at both sides of...
In this paper, class-E power amplifiers (PAs) and rectifiers, operating at UHF band, are properly integrated in efficient AC-to-RF and RF-to-AC converters for their use in 50/60 Hz wireless power transmission (WPT). Slightly modifying a center-tap full-wave rectifier, it is proved that a 915 MHz frequency carrier may be high-level amplitude modulated by each of the semi-cycles of the utility waveform...
A UHF outphasing transmitter, based on continuous-mode class-E power amplifiers (PAs) and implementing a constant-gain envelope tracking (ET) strategy, is presented in this paper. Drain terminating and biasing networks are designed to provide near optima impedance values at the fundamental and higher order harmonics to the selected GaN HEMT device. A high-efficiency wideband performance, 80% for a...
In this paper, a reconfigurable class E oscillator/rectifier, based on an Enhancement-mode Pseudomorphic High Electron Mobility Transistor (E-pHEMT), is proposed. Using high Q lumped elements for implementing the desired terminations at drain side, as well as for the feedback/phase shifting network, the same circuit can be used either as a DC-to-RF inverter for efficient signal transmission, or as...
In this paper, the design of a class E2 resonant DC/DC converter, operating at UHF band, is proposed. Combining the use of GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element multi-harmonic matching networks, a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power. By means of a Pulse Width Modulation (PWM) over the gate...
In this paper, the design of a class E synchronous rectifier, working in the 900 MHz frequency band and based on an Enhancement-mode Pseudomorphic High Electron Mobility Transistor (E-PHEMT), is proposed. Thanks to its small on-state resistance and its slightly positive threshold voltage, this type of device may offer an excellent performance when operated as a switch without biasing its gate terminal...
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