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We have grown high quality epitaxial TiN/Si(100) and Cu/TiN/Si(100) heterostructures by pulsed laser deposition. The epitaxial TiN films have the same low (15 µΩ-cm) resistivity as TiSi2 (C-54) phase with excellent diffusion barrier properties. In addition, Schottky barrier height of TiN was close to that of TiSi2 (0.6-0.7 eV). Auger and Raman spectroscopy revealed that the films were stoichiometric...