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Etching characteristics of high-k dielectric materials (HfO 2 ) and metal electrode materials (Pt, TaN) have been studied in high-density chlorine-containing plasmas at pressures around 10mTorr. The etching of HfO 2 was performed in BCl 3 without rf biasing, giving an etch rate of about 5nm/min with a high selectivity of >10 over Si and SiO 2 . The etching of Pt...
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