The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Significant reduction in the surface area required for high voltage lateral DMOS transistors (LDMOSTs) has been achieved. Application of a recently developed field shaping technique has resulted in transistors exhibiting breakdown voltages well in excess of the planar junction limit. Further extensions of the method predict LDMOSTs having active surface area less than or comparable to vertical MOS...