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H1 photonic crystal nanocavities with a short sub-wavelength air-slot that can concentrate an electric field to one antinode with V<0.025(λ/n)3 experimentally exhibited a Q factor over 2×105 and a Q/V reaching 107.
Systematic multi-hole tuning of H0 nanocavity with theoretical Q of ∼107 is reported that outperforms L3 and other a-few-missing-hole nanocavities over a wide slab-thickness range. Experimental Q of ∼106 is achieved.
We achieved three-dimensional mode conversion between a Si-wire waveguide and a deep sub-λ plasmonic slot waveguide (60 χ 50 nm2) for the first time. The coupling loss was only about 2 dB.
We developed a method for calculating the Q-factor of a 2D photonic crystal nanocavity directly from the in-plane wavevector distribution of the cavity mode. A high-Q of >107 was obtained with high accuracy and speed.
A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).
A new systematic hole-shifting rule enhances the Q factor of a Ln (n:2-5) nanocavity one order of magnitude both in theory and experiment. The simple rule allows experimental Q optimization without the help of simulations.
We have demonstrated that a photonic crystal nanocavity resonantly enhances the Raman scattering of single-walled carbon nanotubes. The enhanced Raman intensity is 10 times larger than the intensity of nanotubes on flat silicon.
We demonstrated the direct modulation of photonic-crystal nanocavity lasers to realize on-chip optical interconnects. A maximum 3-dB bandwidth of 16.2 GHz was obtained. We achieved a 17-Gb/s eye opening with a 35.3-fJ/bit energy cost.
We demonstrate direct modulations of photonic-crystal nanocavity lasers. Only a 35-μA bias current is required for 10-Gb/s modulation with a bit-error rate better than the forward error correction limit, resulting in a 5.5-fJ/bit energy cost.
The introduction of the photonic crystal (PhC) wavelength-scale cavity as a laser cavity enables us to obtain both ultralow threshold current and operating energy. These parameters are essential when using the transmitters in chip-to-chip and on-chip interconnections. To improve the device performance, we employ an ultracompact embedded active region that we call a lambda-scale embedded active-region...
Multi-bit optical memories based on a monolithic 128-channel array of photonic crystal nanocavities on a Si chip and a 32-channel array of nanocavities with a built-in buried heterostructure on an InP chip are demonstrated.
An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.
We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 µW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs...
Recently, photonic crystals have enabled a variety of ultrasmall photonic devices with extremely small energy consumption of ∼fJ/bit level, suggesting that we can integrate a vast number of nanophotonic devices in a single chip. This technology may give us a way to introduce high-speed integrated photonics in an information processing chip, which will be crucial in future ICT.
We fabricate electrically driven wavelength-scale embedded active-region photonic-crystal lasers using ion implantation and diffusion methods. The device begins continuous wave lasing at room temperature, and has a threshold current of 0.48 mA.
We demonstrate direct modulation of an electrically driven photonic crystal nanocavity laser for the first time. Employing ultracompact embedded active-region and lateral current injection structure, the device operates at 10 Gbit/s with ultra-low operating energy.
We demonstrate the continuous-wave (CW) operation of photonic-crystal (PhC) nanocavity lasers at up to 80°C by using InP buried heterostructures (BH). The wavelength of a PhC laser can be precisely designed over a wide range exceeding 100 nm by controlling the lattice constant of the PhC. The dynamic responses of the PhC laser are also demonstrated. These results reveal the laser's availability for...
We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
We studied the spatio-temporal behavior of the carriers in photonic crystal nanocavities and showed that diffusion enables fast switching, which is the advantage of nanocavity switches over other larger optical switches.
A pulse delay corresponding to a slow group velocity of ∼0.008c was observed in a low-loss coupled cavity waveguide formed by 60 photonic crystal nanocavities whose intrinsic Q was as high as 106.
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