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A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical storage cell model has been developed. The dependenceof the transistor and memory cell parameters on the dose of neutron flux and γ-quanta was investigated. It is shown that when...
The objective of the represented work is the effectiveness increase of PJ signals estimation in digital paths of telecommunication systems. The method and the device of phase jitter estimation of clock signals are suggested. That is characterized by enhanced resolving power and statistical stability of estimates by means of digital multistage periodogram-correlogram processing of jitter signals.
The method of volume expansion of analog-to-digital conversion path of jitter signals in telecommunication systems is suggested. As distinct from the current methods, the suggested one takes into account phase instability value of all analog-to-digital converter modules.
This paper presents the algorithms that enable one to detect bit errors and their conditions on the background of additive disturbance. Besides, the formed algorithms enable one to separate errors of different types from one another: insertion, deletion and background additive errors.
The radio engineering digital device with pulse-frequency information coding has been synthesized. Using such methods of information coding and synthesizing have been shown to simplify block diagrams and to reduce energy consumption comparing to pulse-potential coding and traditional synthesizing methods.
This paper presents a system of automated design of digital radio devices with frequency representation of information, which can significantly simplify the design process of digital devices with large number of input signals.
In this paper the thermal-field measurements for evaluating the parameters of the memory cells (MC) based on amorphous semiconductors (AS) are used for the analysis of the temperature dependence of differential electrical conductivity of memory cells.
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