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Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO‐buffered silicon (Si/STO) and STO single‐crystal substrates, and...
We demonstrate multi-level optical weights embedded in a silicon photonic platform based on ferroelectric domain switching. Ferroelectric barium titanate integrated on silicon resonator structures is used as the memory material. By applying short voltage pulses of 100ns, we can switch fractions of the ferroelectric domains and thus change the transmission of the waveguides by more than one order of...
An integrated ferroelectric plasmonic Mach-Zehnder modulator is demonstrated to work in a direct-detection setup with a 72 Gbit/s NRZ modulation format. The device works reliably beyond 130°C with an extinction ratio beyond 15 dB.
Significant progress has been made in integrating novel materials into silicon photonic structures to extend the functionality of photonic circuits. One of these promising optical materials, BaTiO3 (BTO), exhibits a large Pockels coefficient as required for high-speed light modulators. Here, we employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize...
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