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In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical...
This paper introduces a new high voltage double partial SOI (DPSOI) with variable-k (permittivity) dielectric for improving breakdown voltage. The mechanism of breakdown is that the length of vertical ionization integral increases significantly, because of the two symmetrical windows results it by folding effect and the additional electric field produced from variable-k dielectric buried layer modulates...
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