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The nonlinear drain-source capacitance (Cds) of source field plated power RF GaN device has been modeled by an artificial neural network (ANN) for easy integration with a compact model. This hybrid modeling approach can be suitable for a quick, technology independent solution to a complex problem. In this study it is shown that the proposed hybrid model based on a modified EEHEMT model demonstrates...
In this paper lumped approach to establish a package model for multi-cell GaN devices is presented. EM simulated s-parameters are matched to that measured on open and short structures. Initial lumped equivalent R-L-C elements are obtained by studying scaling behavior on standard elements. The model is integrated with GaN unit cell model to construct a package device. The model behavior is validated...
We describe a measurement comparison of distortion in a complementary metal-oxide semiconductor low-noise device operating under weakly nonlinear conditions. Issues that commonly arise in performing and interpreting nonlinear measurements are discussed, such as power and wave-based representations and the effects of terminating impedance on intermodulation distortion. We demonstrate that the increased...
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