The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The substantial energy dissipation of photoreceivers will obstruct dense photonic–electronic integration in keeping the development of processors and communications on a chip. Nanophotodetectors offer the opportunity to overcome this problem by allowing us to realize an amplifier-free bias-free receiver. Low device capacitance and forward-biased operation are the keys to achieving such a receiver,...
Generating correlated photons is an essential technology for photonic quantum information experiments. Increasing the generation efficiency of photon pairs via the enhancement of material nonlinearity is important for various applications including a near-on-demand single photon source based on multiplexed photon pair sources [1]. In this regard, photonic crystal nanocavities are attractive nonlinear...
We have numerically simulated graphene-loaded silicon photonic crystal waveguides. We found that it is possible to create a nanocavity mode induced by graphene, and Fermi energy modulation of graphene enables us to control cavity formation.
We present our latest research results about ultralow power integrated nanophotonic devices based on photonic crystals and some more nanophotonics. We will also discuss the possibility to employ these integrated nanophotonics for putting optical computing technologies into a processor chip.
Enhanced coupling in slanted L3 nanocavity array expanded bandwidth to 4 THz at telecom wavelength. High-Q tuned L3 nanocavity realized 1,000 coupled cavities with acceptable propagation loss and delay-bandwidth product over 100.
Systematic multi-hole tuning of H0 nanocavity with theoretical Q of ∼107 is reported that outperforms L3 and other a-few-missing-hole nanocavities over a wide slab-thickness range. Experimental Q of ∼106 is achieved.
Ultrasmall InGaAsP optical modulators were realized using a photonic crystal waveguide/nanocavity with a small-capacitance p-i-n junction and the Franz-Keldysh effect. Eye patterns reaching 56 Gb/s and a record-low charging energy of <100 aJ/bit were evaluated.
We discuss why large-scale integration of nano-photonics is needed in future ICT, and describe our on-going research of integrated nanophotonics based on photonic crystals.
The on-chip integration of all-optical switches and random-access memories based on a photonic crystal (PhC) nanocavity having a carrier-induced optical nonlinearity are presented. 25-channel all-optical gate switching and the wavelength-division multiplexing operation by silicon PhC nanocavity arrays were demonstrated with a femto-joule energy level. For the all-optical memory, an InP-based PhC nanocavity...
We developed a method for calculating the Q-factor of a 2D photonic crystal nanocavity directly from the in-plane wavevector distribution of the cavity mode. A high-Q of >107 was obtained with high accuracy and speed.
InGaAs-embedded photonic crystal photodetectors were demonstrated towards realizing photoreceivers with small junction capacitance. A 1-A/W responsivity and a 40-Gb/s eye opening were successfully confirmed for the 1.7-µm-long device.
A tuned L3 design with an enhanced Q factor and a small mode volume enabled 2.3-nW bias power for a buried-heterostructure InGaAsP/InP nanocavity optical memory that was 1/10 of the previous record (30 nW).
This paper reviews our recent studies of ultralow-power nanophotonics devices towards implementing a dense optical communication network into a processor chip. A photonic crystal nanocavity that has a very large Q/V ratio is a very promising tool for reducing the consumption energy and footprint for this goal. We show several examples of photonic-crystal nanocavity devices that exhibit record-low...
Narrowband optical parametric processes are important for applications such as optical parametric oscillators [1] and sources of single photons suitable for the storage in quantum memories [2]. For the strong nonlinear interaction, it is desirable to have nanostructures that support multiple resonances. Recently, a photonic crystal (PhC) cavity was specially designed to have multiple resonant frequencies...
For large-scale, multi-partite photonic quantum information system, stable on-demand single photon sources are particularly important building blocks. A scheme to implement the source is to multiplex many heralded single photon sources of identical photon pair generators [1]. To achieve this, we must increase the integration density of the photon pair generators. Slow light enhanced nonlinearity in...
Silicon photonic crystal nanocavities were monolithically integrated to construct multichannel all-optical switches. Successful operation of 25 resonant channels was demonstrated with a length of only 200 μm and an energy consumption in the femtojoule regime.
We report an on-chip single photon buffer experiment using a coupled-resonator optical waveguide. A pulsed photon from a correlated photon pair source was successfully delayed by 160 ps while maintaining non-classical intensity correlation.
We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 µW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs...
Recently, photonic crystals have enabled a variety of ultrasmall photonic devices with extremely small energy consumption of ∼fJ/bit level, suggesting that we can integrate a vast number of nanophotonic devices in a single chip. This technology may give us a way to introduce high-speed integrated photonics in an information processing chip, which will be crucial in future ICT.
We fabricate electrically driven wavelength-scale embedded active-region photonic-crystal lasers using ion implantation and diffusion methods. The device begins continuous wave lasing at room temperature, and has a threshold current of 0.48 mA.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.