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A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled...
This paper presents device, circuit and system modelling to validate the use of neural nanowire FETs (u-NWFETs) towards a hardware-realizable Neural Network. Hardware neural networks are promising for neuromorphic computing and have many prospective applications for bi-directional interface in prosthetics, and electroceuticals etc. Device simulation of a u-NWFET has been carried out followed by circuit...
Semiconducting Ba6−3xNd8+2xTi18O54 ceramics (with x = 0.00 to 0.85) were synthesized by the mixed oxide route followed by annealing in a reducing atmosphere; their high-temperature thermoelectric properties have been investigated. In conjunction with the experimental observations, atomistic simulations have been performed to investigate the anisotropic behavior of the lattice...
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