This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor brings a step-change in the integrated magnetic sensor's performance. Finally, a potential of GaN split current magnetic sensitive HEMT has been discussed.