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Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
Continuous miniaturization of semiconductor devices has been the main driver behind the outstanding increase of speed and performance of integrated circuits. In addition to a harmful active power penalty, small device dimensions result in rapidly rising leakages and fast growing stand-by power. The critical high power consumption becomes incompatible with the global demands to sustain and accelerate...
Photovoltaic devices as large-area semiconductor devices are macroelectronic devices, however, solar cells include nanostructures and/or nanomaterials to boost the conversion efficiency of the devices. In this contributions we focus on nanotextures which play an important role in increasing optical performance of solar cells. We present a method of nanotexture fabrication for PV applications based...
The Horizontal Current Bipolar Transistor (HCBT) technology, as an innovative concept of bipolar-CMOS integration, is presented. This low-cost integration, achieved by using only 2 or 3 additional lithography masks, allows the fabrication of HCBTs with high-performance characteristics (i.e., fT = 51 GHz, fmax = 61 GHz, BVCEO = 3.4 V). The HCBT reliability analysis based on stress tests usage, as a...
This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential...
The single event transients (SETs) are a common source of malfunction in nano-scale CMOS integrated circuits. For this reason, evaluation of the SET effects and application of appropriate measures for their mitigation are fundamental tasks in the design of advanced radiation hardened integrated circuits. In general, SET analysis is based on the multi-scale modeling and simulation approach comprising...
Electronic components intellectual capabilities growth is based on the usage of microelectronic's technology: processes, CAD-approaches, structures and devices. Microelectronics implementation into all functional groups of electronic parts is declared to become the basic trend in their product range development. These phenomena essentially reduce the radiation hardness values of the devices that previously...
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor...
Graphene is a carbon allotrope in which the atoms are arranged in a two-dimensional honeycomb lattice, which comprises two hexagonal sublattices. The existence of these two sublattices gives rise to the electron pseudospin and, along with the overlapping pz orbitals, to the absence of back-scattering, which give to graphene high-quality transport properties. Graphene is a gapless material and currents...
Hair cells are thought to be passive transduction systems able to convert a mechanical pulse in an electrical signal. In this paper, we have investigated the polyelectrolyte properties of actin filaments which in interaction with myosin motor proteins represent basic participants in mechano-electrical transduction in the stereocilia, mechanosensing organelles of hair cells. We have elaborated a biophysical...
Memristors are promising candidates to enhance performances in RF/microwave circuits, because memristors do not require any bias, and there are no moving parts involved. In this paper, we propose that memristors could be used as switches for designing a reconfigurable microwave filter. Results obtained using Pi's model for RF/microwave simulations are presented. For the memristor state transition,...
This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of VBD=600V and VBD=700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10−9 A/μm. Using...
Charge trapping properties of Al-ZrO2/Al2O3/ZrO2-SiO2-Si structures were investigated in attempt to elucidate the instability in their C-V hysteresis. The hysteresis in these structures is mainly due to subsequent trapping of electrons and holes injected from the Si substrate. However the competitive process of electron injection from the gate accompanied by the high leakage introduces instability...
Alloyed ohmic contacts to GaAs consist of separate alloyed and unalloyed layers beneath the contact metal layer. (A similar situation is metal to silicide to silicon contacts.) Thus there are three distinct layers separated by two interfaces, each layer having a different resistivity and each interface having a different specific contact resistance. Such a multiple layer contact makes the modeling...
A novel TFET known as Double Source Tunnel FET (DS-TFET) is proposed in this paper, which provides higher ON current (ID-ON) with smaller turn-on voltage as compared to present Si based Tunnel FETs. The tunneling area is considerably enhanced which in turn increased the on-current ID-ON (∼29.2 μA/μm) for a smaller turn-on voltage (Vtu = 0.15 volt). The results of rigorous 2D simulation are presented...
The nonlinear electromagnetic (EM) phenomena in terahertz (THz) range in the crystalline SrTiO3 are investigated theoretically. The goal is to investigate possibilities of the forming of short THz EM pulses. The moderate cooling T ≈ 77 K is considered. The self-action of input long envelope and baseband pulses leads to the modulation instability due to the cubic nonlinearity and frequency dispersion...
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